Electrostatic Discharge Protection Devices Macromodelling Using Open-Source Tools
https://doi.org/10.15514/ISPRAS-2025-37(3)-8
Abstract
The semiconductor diode and grounded gate MOSFET (GGMOS) devices are commonly used as electrostatic discharge (ESD) protection element in CMOS ICs circuitry. This article presents an implementation of ESD diode and GGMOS macro models using open-source circuit simulation tools (Qucs-S and Ngspice). The proposed models could serve for the circuit simulation of the ESD event. Such simulation allows to estimate the ESD robustness of the IC at the early design stage.
Keywords
About the Authors
Vadim Vadimovich KUZNETSOVRussian Federation
Cand. Sci. (Tech.), Associate Professor of the Electronic engineering department of the Bauman Moscow State Technical University. His research interests include open-source circuit simulation software development, analog ICs design, ESD robustness of microelectronic devices.
Vladimir Victorovich ANDREEV
Russian Federation
Dr. Sci. (Tech.), Full Professor, chief of the Electronic engineering department of the Bauman Moscow State Technical University. His research interests include MOS structures physics, ICs technology, thin dielectric films physics.
Semen Andreevich LOMAKIN
Russian Federation
A Master student of the Electronic engineering department of the Bauman Moscow State Technical University. His research interests include analog ICs design, ESD protection structures design.
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Review
For citations:
KUZNETSOV V.V., ANDREEV V.V., LOMAKIN S.A. Electrostatic Discharge Protection Devices Macromodelling Using Open-Source Tools. Proceedings of the Institute for System Programming of the RAS (Proceedings of ISP RAS). 2025;37(3):121-130. https://doi.org/10.15514/ISPRAS-2025-37(3)-8